Factory Lead Time  

16 Weeks

Package / Case  

TO-263-3, D2Pak (2 Leads + Tab), TO-263AB

Mounting Type  

Surface Mount

Mount  

Surface Mount

Number of Pins  

3

Transistor Element Material  

SILICON

Current - Continuous Drain (Id) @ 25℃  

150A Tc

Drive Voltage (Max Rds On, Min Rds On)  

10V

Voltage - Gate Threshold (Vgs(th)) (Max) @ Id  

4V @ 250μA

Turn Off Delay Time  

48 ns

Power Dissipation (Max)  

230W Tc

Number of Elements  

1

Published  

2013

Series  

HEXFET®

Packaging  

Tape & Reel (TR)

Operating Temperature  

-55°C~175°C TJ

JESD-609 Code  

e3

Part Status  

Active

Moisture Sensitivity Level (MSL)  

1 (Unlimited)

Number of Terminations  

2

ECCN Code  

EAR99

Terminal Finish  

Matte Tin (Sn) - with Nickel (Ni) barrier

Additional Feature  

AVALANCHE RATED, ULTRA-LOW RESISTANCE, HIGH RELIABILITY

Terminal Form  

GULL WING

Peak Reflow Temperature (Cel)  

260

Time@Peak Reflow Temperature-Max (s)  

30

JESD-30 Code  

R-PSSO-G2

Element Configuration  

Single

Operating Mode  

ENHANCEMENT MODE

Power Dissipation  

230W

Case Connection  

DRAIN

Turn On Delay Time  

18 ns

FET Type  

N-Channel

Transistor Application  

SWITCHING

Rds On (Max) @ Id, Vgs  

4.9m Ω @ 75A, 10V

Input Capacitance (Ciss) (Max) @ Vds  

4780pF @ 25V

Gate Charge (Qg) (Max) @ Vgs  

180nC @ 10V

Rise Time  

110ns

Vgs (Max)  

±20V

Fall Time (Typ)  

82 ns

Continuous Drain Current (ID)  

150A

Gate to Source Voltage (Vgs)  

20V

Drain-source On Resistance-Max  

0.0049Ohm

Drain to Source Breakdown Voltage  

55V

Pulsed Drain Current-Max (IDM)  

600A

Avalanche Energy Rating (Eas)  

270 mJ

Width  

9.65mm

Length  

10.668mm

Height  

4.826mm

RoHS Status  

ROHS3 Compliant

Radiation Hardening  

No